Hynix/Samsung/Kingston 8GB DDR4 Laptop Ram (Pullout)

Features

JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB Height: 0.740” (18.75mm) or 1.180” (30.00mm)
3 Years warranty